US-based semiconductor manufacturer Diodes has added new automotive-grade bipolar transistor series, DXTN/P 78Q and DXTN/P ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...

“With BVceo up to 100V, continuous current to 10A – and 20A peak – and saturation voltage as low as 17mV, these transistors ...

New technical paper titled “Organic bipolar transistors” from researchers at Technische Universität Dresden, NanoP, Technische Hochschule Mittelhessen, University of Applied Science, and ALBA ...

Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announces an expansion of its automotive-compliant* bipolar transistor portfolio with the introduction of the DXTN/P 78Q & 80Q series. These ultra-low ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

The company’s first bipolar transistors in its miniature PowerDI5 surface-mount package are designed on a fifth-generation matrix emitter process, yielding a range of 12 NPN and PNP transistors with a ...

Members can download this article in PDF format. Use of differential signaling in analog front ends is increasing across a range of applications, from audio processing to factory automation.

Tellurium nanowire transistors switch between boosting and suppressing their light response through voltage alone, enabling ...