First-of-its-kind bidirectional GaN technology with DC blocking dramatically reduces switch count needed for power conversion topologies Compatible with standard gate drivers Soft- and hard-switching ...

GaN Pioneer Exploring Next Generation Power Conversion Where One Transphorm FQS Can Replace Multiple Silicon Devices Transphorm will prototype the FQS platform using its 650 V GaN technology that ...

A groundbreaking achievement has been made by scientists from the Indian Institute of Science (IISc), who have introduced a completely homegrown gallium nitride (GaN) power switch that is poised to ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel Electronics proudly announces the release of the TDGM650LS60, the first product in its innovative new 650V power module family. This new module ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Silicon is the most amazing material for electronics. The ability to grow pure bulk silicon and dope for both p- and n-type properties has been a huge boost for the power electronics industry, leading ...

The design of an electronic switched-mode power system has always been a complex task, requiring both knowledge and experience. With the appearance of gallium nitride (GaN), this task has even become ...

Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This switch offers high peak power and is designed to replace ...

Gallium nitride (GaN) power semiconductors continue to push the boundaries of high-voltage electronics, as evident at this year’s Applied Power Electronics Conference (APEC) in Long Beach, California.

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced ...